Integrated Circuits: Symmetric Usage in Reversing Paralysis

Dielectrics in Integrated Circuits

This paper presents details on ultra thin (silicon dioxide and silicon nitride based composite structures) dielectrics that have the potential for meeting future device requirements. The increase in gate leakage current is a major problem for scaled conventional gate oxide in advanced device technology. Approaches to minimize this problems have been reviewed. Various Gate, Interlayer and DRAM d...

Polymers in Integrated Circuits

The last three decades have seen an explosive growth in silicon-based microelectronics. In search of flexible and low-cost substrates, organic semiconductorbased integrated circuits (ICs) have been suggested as an alternate to silicon ICs. The discovery that the electrical conductivity of some polymers can be increased from insulator to semiconductor range or metallic range by doping, has been ...

Integrated Circuits

SRT Division Diagrams and Their Usage in Designing Custom Integrated Circuits for Division

This paper describes the construction and analysis of several diagrams which depict SRT division al orithms. These diagrams yield insight into the operation of the algorithms and the many imp ementation tradeoffs available in custom circuit desi n. B radix diagrams are shown, as well as tables for higher radices. Ig Examples of simple low he tables were enerated by a program which can create an...

A MEMS Capacitive Microphone Modelling for Integrated Circuits

In this paper, a model for MEMS capacitive microphone is presented for integrated circuits.  The microphone has a diaphragm thickness of 1 μm, 0.5 × 0.5 mm2 dimension, and an air gap of 1.0 μm. Using the analytical and simulation results, the important features of MEMS capacitive microphone such as pull-in voltage and sensitivity are obtained 3.8v and 6.916 mV/Pa, respectively while there is no...